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| PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features * Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation * Industry standard TO-220 Full-Pak C VCES = 600V G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A N-channel Benefits * Generation 4 IGBTs offer highest efficiencies available * IGBTs optimized for specific application conditions * Designed to be a "drop-in" replacement for equivalent industry -standard Generation 3 IR IGBTs TO-220 Full-Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 23.5 13.0 68 68 20 10 45 18 -55 to + 150 300 (0.063 in. (1.6mm) from case) Units V A V mJ W C Thermal Resistance Parameter RJC RJA Wt Junction-to-Case Junction-to-Ambient, typical socket mount Weight Typ. --- --- 2.1 (0.075) Max. 2.8 65 --- Units C/W g (oz) www.irf.com 1 08/02/01 IRG4IBC30S Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage T 18 -- -- V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage -- 0.75 -- V/C VGE = 0V, IC = 1.0mA -- 1.40 1.6 IC = 18A VGE = 15V Collector-to-Emitter Saturation Voltage -- 1.84 -- IC = 34A See Fig.2, 5 V -- 1.45 -- IC = 18A , TJ = 150C Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = VGE, IC = 250A Forward Transconductance U 6.0 11 -- S VCE = 100 V, IC = 18A -- -- 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current A -- -- 2.0 VGE = 0V, VCE = 10V, TJ = 25C -- -- 1000 VGE = 0V, VCE = 600V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 50 75 IC = 18A 7.3 11 nC VCC = 400V See Fig.8 17 26 VGE = 15V 22 -- 18 -- TJ = 25C ns 540 810 IC = 18A, VCC = 480V 390 590 VGE = 15V, RG = 23 0.26 -- Energy losses include "tail" 3.45 -- mJ See Fig. 9, 10, 14 3.71 5.6 21 -- TJ = 150C, 19 -- IC = 18A, VCC = 480V ns 790 -- VGE = 15V, RG = 23 760 -- Energy losses include "tail" 6.55 -- mJ See Fig. 10, 11, 14 7.5 -- nH Measured 5mm from package 1100 -- VGE = 0V 72 -- pF VCC = 30V See Fig. 7 19 -- = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. (See Fig. 13b) T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot. R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 23, (See Fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4IBC30S 20 S q u a re w a v e : 6 0% of rate d volta ge 15 Load Current ( A ) I For both: D uty cycle 50% Duty cycle: :50% T J = 12 5C Tj = 125C T sink 9 0 C Tsink = 90C G ate drive as specified Gate drive as sp ecified P ow e r Dissipation 5.8W Power D is s ip a tio n == 7.0W T ria n g u la r w a v e : I F o r bo th: 10 Id e a l d io d e s 5 C la m p v o lta g e : 8 0 % o f ra te d 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 25 o C TJ = 150 o C TJ = 150 o C 10 10 TJ = 25 oC 1 1 1 V = 15V 20s PULSE WIDTH GE 10 0.1 5 6 7 V = 50V 5s PULSE WIDTH CC 8 9 10 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4IBC30S 24 3.0 20 VCE , Collector-to-Emitter Voltage(V) V GE = 15V V = 15V 80 us PULSE WIDTH GE Maximum DC Collector Current (A) 2.5 IC = 36 A 16 12 2.0 8 IC = 18 A 1.5 4 IC = 9 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 TJ , Junction Temperature (C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.0001 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x ZthJC + TC J 0.1 1 0.01 PDM t1 t2 10 0.001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4IBC30S 2000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 1500 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 18A 16 Cies 1000 12 8 500 C oes C res 4 0 1 10 100 0 0 10 20 30 40 50 60 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.80 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 3.76 I C = 18A 100 RG = 23Ohm VGE = 15V VCC = 480V IC = 36 A 10 3.72 IC = 18 A IC = 9.0A 9A 3.68 1 3.64 10 3.60 0 10 20 30 40 R RG, GateResistance ()(Ohm) , Gate Resistance 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 G TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4IBC30S 15.0 9.0 6.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 12.0 VGE = 23Ohm = 150 C = 480V = 15V 1000 VGE = 20V T J = 125 oC 100 10 3.0 0.0 0 10 20 30 40 SAFE OPERATING AREA 1 50 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4IBC30S L 50V 1 00 0V VC * 0 - 480V D .U .T. RL = 480V 4 X I C@25C 480F 960V R Q * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 90 % S 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4IBC30S TO-220 Full-Pak Package Outline 1 0 .6 0 (.4 1 7 ) 1 0 .4 0 (.4 0 9 ) o 3 .4 0 (.1 3 3 ) 3 .1 0 (.1 2 3 ) -A- 4 .8 0 (.1 8 9 ) 4 .6 0 (.1 8 1 ) 2 .8 0 (.1 10 ) 2 .6 0 (.1 02 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 3 .7 0 (.1 4 5 ) 3 .2 0 (.1 2 6 ) 7 .10 (.2 8 0 ) 6 .70 (.2 6 3 ) 1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 ) 1 .1 5 (.0 4 5 ) M IN . 1 2 3 NOTES: 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 .3 0 (.1 3 0 ) 3 .1 0 (.1 2 2 ) -B1 3 .7 0 (.5 4 0 ) 1 3 .5 0 (.5 3 0 ) C D A 1 .4 0 (.0 5 5 ) 3X 1 .0 5 (.0 4 2 ) 2 .5 4 (.1 0 0 ) 2X 0 .9 0 (.0 3 5 ) 3 X 0 .7 0 (.0 2 8 ) 0 .2 5 (.0 1 0) M AM B 3X 0 .4 8 (.0 1 9 ) 0 .4 4 (.0 1 7 ) B 2 .8 5 (.1 1 2 ) 2 .6 5 (.1 0 4 ) M IN IM U M C R E E P A G E D IS T A N C E B E T W E E N A -B -C -D = 4 .8 0 (.1 89 ) Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/01 8 www.irf.com |
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